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ESD protection design for the RF transmit/receive switch (T/R switch) with embedded silicon-controlled rectifier (SCR) is proposed, where the SCR device is embedded in the ESD diode and the transistors of T/R switch by layout skill. Silicon chip verified in a 90-nm CMOS process has been measured by TLP and HBM ESD test to confirm its efficiency for ESD protection. The parasitic capacitance from the...
Tunnel field-effect transistor (TFET) is a promising device which has extraordinary performance on subthreshold swing and is feasible for ultralow power applications. However, one of the main factors of power dissipation and circuit delay among different designs of TFET, namely, parasitic capacitances, has not been discussed in detail. In this paper, parasitic capacitance of various types of TFETs...
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