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In our previous study, we argued that stabilization of power source voltage by optimizing a chip wiring feature was essential to achieving high performance transmission for over 40 Gbps I/O on an interface circuit. This region frequency transmission approach is fairly important to solve communication bottleneck. We will examine power supply wiring for more high frequency (over 40 Gbps) which is significant...
The most important element on IoT thought is communication bandwidth that is directly affected the data processing performance and communicating each other. The way for getting wider bandwidth involves three approaches which are high speed clocking, many lanes and high data compression. The first two issues relate with packaging technology[10]. The system performance balance should put together the...
To achieve high performance communication it is necessary to consider all the design parameters for the switching circuit, interconnection and power supply. As these parameters definitely affect each other for over 20Gbps. These must be included for their optimization. These parameters are driver on-resistance (drivability), characteristic impedance of all connection routs, dependent frequency load...
Recent communication for cloud computing strongly requires an order of magnitude wider bandwidth than current one, such as over 28Gbps in SerDes and Interiaken protocols. So the IO transmitter and receiver becomes to one of key issues. In generally, those high bandwidth IO systems consume relative high power due to relate with fCJ⁁2 by CMOS transistor and parasitic capacitances. Additional problem...
Recent communication for cloud computing strongly requires one order magnitude wider bandwidth than current one, such as over 28Gbps in SerDes and Interlaken protocols. So the technology of IO transmitter and receiver becomes to one of key issues. In generally, those high bandwidth IO systems consume relative high power due to relate with fCV^2 by CMOS transistor and parasitic capacitances. Additional...
We investigated the transient response characteristic of through silicon via (TSV) in a high-resistivity silicon interposer. For this investigation, signal ground (SG)-TSV-chain pairs in high-resisitivity silicon (>1000 Ω·cm) were prepared. Various pulse waves (swing: −1.8–0 V or 0–+1.8 V, pulse width: 250 ps–100 ms, duty ratio: 1/1) were applied to a SG-TSV-chain pair by using a pulse generator,...
We have proposed to use the electrostatic capacitance of through-silicon-vias (TSV) in the silicon interposer as the decoupling capacitor. Because the electrostatic capacity of the TSV acts as a decoupling capacitor, it is enabled to decrease the power distribution network (PDN) impedance. Therefore, the dependency to the PDN impedance in the effect of the layout and the shape of the TSV capacitor...
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