The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Thin film devices (FDSOI) are among the most promising candidates for next device generations due to their better immunity to short channel effects (SCE). In addition, the introduction of high-k and metal gate has greatly improved the MOSFETs performance by reducing the electrical oxide thickness (CET) and gate leakage current. However, if midgap metal gate is sufficient to provide a high symmetrical...
For the first time, we demonstrate low-VT (VTlin ±0.32V) nMOS and pMOS adjusted in a gate first FDSOI technology by work-function engineering of TiN/TaAlN metal gates. Especially, for low-VT pMOS, various Chemical-Vapor-Deposited TaAlN stacks with optimized Al concentration have been studied to finely tune the work-function above midgap while maintaining good reliability and mobility. Short channel...
This paper compares, for the first time, the scalability of physical- and chemical-vapor-deposited (PVD and CVD) TiN on HfO2 as a gate stack for FDSOI cMOSFETs down to 25nm gate length and width. It is shown that not only the intrinsic material properties but also the device architecture strongly influences the final gate stack properties. Reliability issues, stress and gate control in the sub-35nm...
For the first time, we report fully depleted SOI MOS transistors with WSix gate on HfO2. Gate work function, dielectric properties and channel mobility are presented in terms of Si/W ratio and compared to TiN gate devices. A 35% electron mobility gain was obtained with a WSix gate device as compared to a TiN gate transistor. It was found that both mobility and dielectric characteristics were drastically...
We investigate for the first time the experimental performance of strained silicon directly on insulator (sSOI) for short and narrow FDSOI NMOS transistors integrated with a TiN/HfO2 gate stack. A +16% drive current improvement is reported for a 25nm gate length (among the best ever reported for short substrate-induced strained devices). Through in-depth electrical characterization and mechanical...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.