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This paper presents the first demonstration of a high-throughput die-to-panel assembly technology to form Cu interconnections without solder at temperatures below 200°C. This interconnection technology, previously established with individual single-chip packages on both organic and glass substrates, at pitches down to 30μm, is brought up to a significant manufacturable level by two major innovations:...
Cu/graphene contact is the key interface for graphene-based devices. In the paper, first-principle calculations are used to investigate the detailed interface atomic and electronic structures and Mulliken charge populations of monolayer, bilayer, trilayer grapheme/Cu (111) interface. The Fermi level is pining by the Cu substrate and shifts due to the n-type doping of graphene.
Due to the thin structure employed in planar packaging, the high electric field intensity may occur inside the power module, leading to degradation of the dielectric performance. To resolve this issue, the Metal-Posts-Interconnected Parallel Plate Structure (MPIPPS) is used to reduce the high field concentration in the power module. However, the high bonding joint in MPIPPS will cause high thermo-mechanical...
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