The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The objective of this paper is to predict the main electrical characteristics of SiGe NPN HBTs, like the transit frequency fT, internal capacitances and pinched base sheet resistance for the next CMOS nodes by means of process and hydrodynamic simulations. The as-deposited BiCMOS055 vertical doping profile is exposed to the thermal budgets from existing CMOS040, CMOS028, CMOS028FDSOI and CMOS014FDSOI...
The impact of utilizing silicon oxide (SiO2) strain layer on NPN-SiGe-HBT device's electrical properties and frequency response has been studied using TCAD modeling. Simulations based on hydrodynamic (HD) model have been carried out to clarify the impact of utilizing SiO2 strain layer in the collector region on the device performance. Simulation results show that NPN-SiGe-HBT device employing SiO2...
The TCAD infrastructure developed within the DOTFIVE project is described. The hierarchical TCAD platform includes different Boltzmann equation solvers as well as simulators based on the widely used drift-diffusion and hydrodynamic transport models. In the latter case, accurate physical models were generated. The TCAD platform is used to explore the physics of extremely scaled devices and investigate...
This paper presents the implementation of band-to-band tunneling (BTBT) mechanisms into the compact model of a conventional carbon nanotube transistor FET featuring a MOSFET-like operation. Appropriate equations enable the calculation of the BTBT current as well as the charge pileup in the channel. To ensure the model accuracy and validate the equation set, the compact model simulation results are...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.