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Two-dimensional (2D) dose control is becoming well accepted for semiconductor device fabrication. At the same time, two specialized versions are arising; (1) High accuracy intentional non-uniform dose implant with relatively moderate dynamic dose range and (2) High dynamic dose range intentional non-uniform implant with relatively moderate dose accuracy. Sumitomo Heavy Industries Ion Technology (SMIT)...
Two-dimensional (2D) dose control is becoming well accepted for semiconductor device fabrication. At the same time, two specialized versions are arising; (1) High accuracy intentional non-uniform dose implant with relatively moderate dynamic dose range and (2) High dynamic dose range intentional non-uniform implant with relatively moderate dose accuracy. Sumitomo Heavy Industries Ion Technology (SMIT)...
The SAion-450 is a leading-edge ion implanter developed for the upcoming 450mm wafer generation. The SAion-450 has extremely wide process coverage and productivity throughout both the medium current (MC) and high current (HC) process ranges. Although the area of a 450mm wafer is 2.25 times larger than that of a 300mm wafer, the SAion-450 can process typical MC recipes with higher productivity than...
Needless to say, productivity of ion implantation processes is a very important issue for economical device fabrication. Reduction of implant areas is one of the essential keys to increase a beam utilization factor for high-current ion implanters. SEN already developed the X-, Y-, D-, and F-SAVING system to address this issue. This time, another SAVING system, the O-SAVING, has been developed for...
In order to fabricate highly sensitive image sensors, ultra-high energy ion beams, such as 5 MeV of boron, are required. SEN has developed the S-UHE, a single-wafer ultra-high energy ion implanter, to obtain such ultra-high energy beams. The S-UHE has adopted an electrostatic and symmetric, parallelizing lens system, the concept of which is already used in the MC3-II, a medium-current ion implanter,...
In order to obtain higher beam current extraction with better quality, it is very important to identify plasma density distribution inside the indirectly heated cathode (IHC) ion source. In this paper, the calculations of the plasma density distribution are introduced, applying the finite element method (FEM) of anisotropic thermal conduction with the special modeling near the plasma sheath to ambipolar...
In order to address the process requirements of leading-edge image sensors, a new single-wafer ultra-high energy ion implanter, the S-UHE, has been developed. This product incorporates two exceptional subassemblies. One is the eighteen-stage RF linear accelerator from the UHE, a multi-wafer ultra-high energy implanter, offering maximum beam energy of 2MeV per charge. The other is the field proven...
In order to fabricate highly sensitive image sensors (IS), ultra-high energetic ion beams such as 5MeV of boron are required. In order to address the requirement as well as more aggressive requirements of leading-edge IS, SEN has developed the S-UHE, an ultra-high energy single-wafer ion implanter. One of the most important features in the S-UHE is a precise beam angle control system to obtain stable...
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