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This paper presents a wideband Doherty Power Amplifier (DPA) suitable for Band-1 and Band-3 LTE Basestation applications, using Qorvo's 0.25um GaN on SiC High-Voltage technology. This DPA puts out 85W Pavg and 500W peak power at the Doherty 50-Ω output, with relatively flat 4549% average efficiency across 20% frequency bandwidth, when tested using 10dB PAR WCDMA signal. The DPA offers very good linearized...
This paper describes TriQuint's platform product offering for the emerging pico-cell base station market. The TGA2450 is a highly integrated 50 ohm in/out power amplifier module that offers high efficiency performance in a small form factor. TGA2450 combines high volume, low cost laminate technology with a highly efficient final stage InGaP/GaAs HVHBT Doherty amplifier.
A 2-way symmetrical Doherty amplifier achieving 600W saturated power has been developed using Generation 2 High-Voltage HBT (Gen 2 HVHBT) GaAs technology. In this paper we will show the development method used for this design work. From module optimization to final Doherty design this method is centered on highly accurate high power load pull. Operating at 28V the Doherty amplifier is capable of delivering...
A two stage high power amplifier consisting of a 325W High Voltage HBT (HVHBT) Doherty final and a 20W LDMOS Doherty driver has been developed for use in wireless basestation applications. The lineup achieved greater than 54% PAE at 75W (48.77dBm) average output power with 30dB gain while achieving -55dBc linearized ACPR at 5MHz offset using a 2C11 WCDMA input signal with 6.5dB PAR signal. The DPD...
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