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A 2-way symmetrical Doherty amplifier achieving 600W saturated power has been developed using Generation 2 High-Voltage HBT (Gen 2 HVHBT) GaAs technology. In this paper we will show the development method used for this design work. From module optimization to final Doherty design this method is centered on highly accurate high power load pull. Operating at 28V the Doherty amplifier is capable of delivering...
A two stage high power amplifier consisting of a 325W High Voltage HBT (HVHBT) Doherty final and a 20W LDMOS Doherty driver has been developed for use in wireless basestation applications. The lineup achieved greater than 54% PAE at 75W (48.77dBm) average output power with 30dB gain while achieving -55dBc linearized ACPR at 5MHz offset using a 2C11 WCDMA input signal with 6.5dB PAR signal. The DPD...
A new generation of High Voltage Heterojunction Bipolar Transistor (HVHBT) technology was developed for base station high power amplifiers and multi-stage driver amplifiers. This is an improved version of previously reported InGaP/GaAs HBT capable of operating with supply voltages up to 32 V. Generation 2 HVHBT technology maintains the same high level of efficiency and compatibility with Digital Pre-Distortion...
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