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As scaling CMOS devices is approaching its fundamental limits, a new direction of research has emerged to study beyond-CMOS spintronic devices that use electronic spin as their state variable, offering new and enhanced functionalities. Due to low operating voltage, non-volatility, and efficient implementation of majority gate, a novel spin-based device, all-spin logic (ASL), has been widely studied...
Emerging applications require computing platforms to extract task-relevant information from increasingly large amounts of data. These requirements place stringent constraints on energy efficiency, throughput, latency, and for certain data types, security and privacy of computing platforms. Traditionally, silicon CMOS scaling has been relied upon to meet these energy and delay constraints. However,...
We propose a comprehensive scheme for building spintronics transducers for back and forth signal conversion between spin and charge domains in addition to the associated CMOS peripheral circuitry for spin wave device (SWD) circuits. We perform systematic analysis of the impact of the transducers on the performance of SWD in terms of energy and area overhead. Performance evaluation of SWD compared...
Spin-resolved conductivities in magnetic tunnel junctions are calculated using a semiempirical tight-binding model and non-equilibrium Green's functions. The performance of half-metallic electrodes is studied by comparing conventional Fe-MgO-Fe structures to Co2FeAl-MgO-Co2FeAl structures. The results show higher tunneling magnetoresistance and resistance-area product for Co2FeAl devices across a...
The energy-per-bit and delay of All-Spin Logic (ASL) interconnects have been modeled. Both Al and Cu interconnect channels have been considered and the impact of size effects and dimensional scaling on their potential performance has been quantified. It is predicted that size effects will affect ASL interconnects more severely than electrical interconnects.
For the past 40 years, relentless focus on Moore's Law transistor scaling has delivered ever-improving CMOS transistor density. This paper discusses architectural and materials options which will contribute to the ultimate CMOS device. In addition, the paper reviews device options beyond the ultimate CMOS device.
We demonstrate experimentally the synchronization of two micromechanical oscillators actuated by the optical radiation field. The mutual coupling is purely optical and fully tunable. Upon synchronization, the phase noise drops in agreement with the prediction.
We theoretically and numerically demonstrate that long-range radiation force mediated mechanical coupling and synchronization arise in optomechanical systems. We propose a planar micro-optomechanical device that exhibits non-linear frequency and phase synchronization of two unlike mechanical resonators.
We present the first experimental demonstration of DPSK modulation using a microring modulator. A 250-Mb/s electro-optic silicon microring modulator is shown with a measured 2-dB power penalty in comparison to a commercial LiNbO3 phase modulator.
We demonstrate the first error-free transmission of DPSK using a microring modulator, with a power penalty of 1.1 dB in comparison to a commercial LiNb03 phase modulator. Additionally, long-haul transmission of microring-modulated DPSK is characterized.
We demonstrate ultra-low switching energy (9.4 fJ/bit), ultra-low swing voltage (150 mV peak-peak) electro-optic modulation in a 2.5 µm radius silicon ring modulator. These results can enable direct logic driven silicon modulators.
We demonstrate a tunable-delay of 154ps of a 130GHz bandwidth RF signal using silicon microresonators. To delay such high bandwidth without distortion, we delay an equivalent signal with a much smaller bandwidth (20GHz single sideband) while preserving the original signal's phase.
We show evidence of extreme tuning of micro-photonic resonances (31.4 nm) using optical gradient forces. We estimate the static mechanical displacements to be as large as 60 nm using mW level optical powers.
First demonstration of long-haul transmission reaching bandwidth-distance product of 1-Tb-km/s, using silicon microring resonator electro-optic modulator, sets new precedence for silicon photonic applications. 12.5-Gb/s bit-error-rate and power penalty measurements confirm 80-km of feasible fiber propagation.
Error-free 12.5-Gb/s operation of silicon microring resonator electro-optic modulator is experimentally demonstrated, with bit-error-rate and power penalty performance metrics measured using system-level comparative analysis for varying modulation rates. Results show functional feasibility for photonic networks-on-chip.
We demonstrate ultra fast tuning of the optical quality factor of a resonator on a silicon chip using electro-optic tuning. We tune the cavity quality factor from 20,000 to 6,000 in 100 ps.
We demonstrate strongly enhanced optical trapping forces on sub-micron-diameter dielectric spheres within a pressure-driven microfluidic flow of several hundred μm/s using the evanescent field of the light in silicon waveguides.
We demonstrate superluminal pulse propagation on a silicon chip using an all -optical analog to electromagnetically induced absorption created by the coherent interaction between two micro-resonators. We show group indices tunable between −1158 and −312.
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