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Effects of annealing time on memory characteristics of Ge nanoparticles (NPs) as floating gate of metal-oxide-semiconductor (MOS) structure are investigated in this work. First, Ge NPs at 8.5 nm-near to Si/SiO2 interface were obtained by Low Pressure Chemical Vapor Deposition (LPCVD). The morphology and dimension of these NPs was estimated by the statistic treatment of Atomic Force Microscopy images,...
Silicon dioxide (SiO2) on Si layer with embedded Germanium (Ge) nanoparticles (nps) were made by Low Pressure Chemical Vapor Deposition (LPCVD). Atomic Force Microscopy (AFM) and Raman spectroscopy has been used to study the Ge distribution on SiO2 films as a function of the different temperatures of growth employed. Layers of Ge-nps at 12 nm-near to the Si/SiO2 interface were formed, where the best...
Ge nanocrystallites (Ge-nc) have been formed by ion implantation of Ge+74 into SiO2 matrix, thermally grown on p-type Si substrates. The Ge-nc are examined by Raman spectroscopy, photoluminescence (PL) and Fourier transform infrared spectroscopy (FTIR). The samples were prepared with various implantation doses [0.5; 0.8; 1; 2; 3; 4] × 1016 cm−2 with 250 keV energy. After implantation, the samples...
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