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A low-cost patterning of electrodes was investigated looking forward to replacing conventional photolithography for the processing of low-operating voltage polymeric thin-film transistors. Hard silicon, etched by sulfur hexafluoride and oxygen gas mixture, and flexible polydimethylsiloxane imprinting molds were studied through atomic force microscopy (AFM) and field emission gun scanning electron...
This paper presents, for the first time in Latin America, a triple gate FinFET (also called 3D Transistor) fabrication process using only three lithograph steps. These three steps were done using electron beam lithography (EBL). The EBL allow the definition of the fin width and the transistor channel length without hard mask fabrication. This paper presents the main details about the full process...
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