The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
3D TCAD analysis of blooming for 1.4 μm CMOS image sensor (CIS) with two-shared pixel structure has been performed. Its blooming behavior has been modeled and clear design guidelines for potential control inside CIS pixels have been obtained.
With the advent of CMOS SRAMs manufactured at 40-nm node and beyond, variability of threshold voltage (Vt) and technology-dependent factor in Pelgrom plot (Avt) has become a serious issue in the practical design and fabrication phases. This paper presents (i) a comparative 3D simulation approach using extensive measured data to clarify the magnitudes of LER and RDF effects in generic processes, (ii)...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.