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We present for the first time an analytical model for the effect of short-gate transistor mismatch on analogue circuit design. Analogue circuit design is very vulnerable to device mismatch, as large numbers of matching-sensitive circuits are used. This is particularly severe in short-gate CMOS processes. In this paper, a new analytical mismatch model is developed for both triode and saturation regimes...
An efficient method to accurately capture quantum confinement effects within Monte Carlo (MC) simulation while simultaneously resolving `ab initio' ionized impurity scattering via the density gradient (DG) formalism is presented. The model is applied to study the impact of transport variability due to scattering from random discrete dopants on the on-current variability in realistic nano CMOS transistors...
High variability in nano-scaled technologies can easily disturb the stability of a carefully designed standard 6T-SRAM cell, causing access failures during a read/write operation. We propose a 7T-SRAM cell to increase the read/write stability under large variations. The proposed design uses a low overhead read/write assist circuitry to increase the noise immunity. Use of an additional transistor and...
Quantum corrections based on density gradient formalism, recently introduced in the 3-D Monte Carlo (MC) module of the Glasgow “atomistic” simulator, are used to simultaneously capture quantum confinement effects as well as “ab initio” ionized impurity scattering. This has allowed us to consistently study the impact of transport variability due to scattering from random discrete dopants on the on-current...
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