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Ultra thin HfO2/Al2O3/HfO2 triple-layer gate dielectrics for advanced MIS capacitors have been characterized electrically. The triple-layer gate stacks after post-metal annealing (PMA) at various temperatures have been studied. Experimental results including leakage current, C-V characteristics, and TDDB are presented in this paper. It has been found that the addition of Al2O3 into HfO2 increases...