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Gate-All-Around (GAA) nanowire architecture is aimed to represent the ultimate integration for MOSFET up to dimensions of several nanometers. Very thin nanowires (<; 5 nm) are expected to be used in these ultimate devices, for which a new physical phenomenon emerges: the modification of the band structure compared to bulk silicon, which changes the conduction properties and affects the device characteristics...
In this paper we develop a compact model for ballistic/quasi-ballistic transport in nanowire. Starting from the well-known approach of Natori/Lundstrom, we enhanced it by including an original modeling of SCE/DIBL (Short Channel Effect and Drain Barrier Lowering), scattering mechanisms and quantum mechanical confinement. Our drain current model has been validated by comparisons with numerical simulations...
Due to a new quasi-ballistic extraction methodology dedicated to low-longitudinal-field conditions, experimental carrier mean-free-paths have been determined on strained and unstrained fully depleted silicon-on-insulator (n-FDSOI) devices with Si film thickness ranging from 11.8 to 2.5 nm, gate length down to 30 nm, and a TiN/HfO2 gate stack. Electron mobility evolution with the Si film thickness,...
For the first time, using a new quasi-ballistic extraction methodology dedicated to low longitudinal field conditions, experimental carrier mean-tree-paths have been determined on strained and unstrained n-FDSOI devices with Si film thickness down to 2.5 nm, gate length down to 30 nm and a TiN/HfO2 gate stack. Through deep .inversion charge and temperature investigations, dominant carrier transport...
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