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This paper describes new features and versatility of a Verilog-A FET model for High-Efficiency and wideband applications, with examples in GaN technologies. It describes the flexibility of having the Internal output nodes available for design in exact wave-shaping for high-efficiency class amplifications and a more realistic CDS formulation that meets the needs of newer HEMT technologies with multiple...
Extensive results are presented validating a recently enhanced large signal FET model, DynaFET, applied to an advanced 6x75um periphery, 0.5um gate-length GaN HFET transistor, manufactured by RFMD. Excellent results are achieved for DC (including leakage current), S-parameters versus frequency and temperature, harmonic and intermodulation distortion, as well as load-pull figures of merit, over a very...
This paper describes the salient features of modeling FET devices for switch applications, with examples in GaAs PHEMT and GaN HEMT technologies. It explains the subtle differences that differentiate these models from PA models and what is required to accurately describe their small- and large- signal behavior. In that respect, suggestions are made on how to approach formulation of critical parameters...
In this paper lumped approach to establish a package model for multi-cell GaN devices is presented. EM simulated s-parameters are matched to that measured on open and short structures. Initial lumped equivalent R-L-C elements are obtained by studying scaling behavior on standard elements. The model is integrated with GaN unit cell model to construct a package device. The model behavior is validated...
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