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Hidden in the widely accepted filamentary conduction mechanism for TMO ReRAM is that only a few atoms/vacancy defects control the resistance, thus these devices are intrinsically vulnerable to statistical fluctuation. Experimental results show that individual cells behave randomly and programming outcome for any single cell is unpredictable. Statistically, however, the cells in a memory array follow...
Conducting bridge resistive memory switches by forming and disrupting a thin conducting filament, but this causes high E-field in the insulator just before the filament is completed (or begins to disrupt). This paper addresses, for the first time, degradation caused by this high E-field and a novel solution is proposed. A p-type CuOx semiconductor layer is added as an E-field moderator that dynamically...
Using the dual Vth characteristics of a multi-layer SiO2/SiO2/Cu-GST conducting bridge (CB) structure we can construct a one-resistor cell without an access device (0T1R). Like 1T Flash memory the Vth is used to store the logic state thus leaving all devices always at high resistance state and a separate isolation device is not needed. The Vth of the cell is determined by the presence of CB in the...
The behavior of resistance drift after RESET operation for phase change memory (PCRAM) is investigated. We propose, for the first time, an effective way to accelerate the drift so that the program/read latency may better match that for DRAM for SCM (storage class memory) application. By simply applying an extra annealing pulse after RESET we can quickly anneal out many defects (that are responsible...
An easy to fabricate, low-cost, multi-layer sidewall WOX ReRAM device is proposed for 3D ReRAM application. A 2-layer (10nm × 100nm) device is fabricated and characterized for the first time. The WOX is grown by conventional RTO process but a special semi-permeable TiN (SP-TiN) is developed to achieve the necessary extrusion-free structure for 3D ReRAM. The multi-layer sidewall WOX ReRAM devices show...
The analytical model is developed to calculate the sheet carrier densities of InAlAs/InGaAs metal-oxide-semiconductor metamorphic high electron mobility transistor (MOS-MHEMT) with a thin InGaAs native oxide layer and conventional MHEMT structures. The electric field, potential, and sheet carrier density versus different position within the gate length are investigated for both structures.
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