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Intense terahetz pulses induce a photoluminescence flashes from undoped GaAs/AlGaAs quantum wells under continuous wave laser excitation. This result indicates that the number of excitons increases 10000-fold from that of the steady state.
We report on the extraordinary carrier multiplication phenomena of GaAs quantum wells under only intense terahertz (THz) pulse irradiation. The intensity of exciton luminescence is enhanced more than about 103 times with an increase of the electric field amplitude of the THz pulse from 0.5 to 1 MV/cm with a threshold-like behavior.
The nonlinear interactions of GaAs quantum wells with intense single cycle terahertz (THz) pulses with amplitudes exceeding 1 MV/cm have been studied. We demonstrated for the first time that the number of carriers is enhanced 103 times more with an increase of the electric field amplitude of the THz pulse from 0.5 to 1 MV/cm, eventually which leading a bright near-infrared luminescence. This highly...
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