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The nonlinear light-matter interaction lies at the heart of controlling the electronic systems for the purpose of developing ultrafast optical switching and modulation devices [1], and attosecond laser technology [2]. In general, the interaction causes the formation of photon dressed state that is a quantum superposition state with energetically spaced sidebands and enables to generate the phase-locked...
We measured the transient absorption changes of a near-infrared (NIR) pulse in GaAs quantum well under a multicycle THz wave driving. By changing the delay between the NIR probe and the THz wave, the absorption strength can be modulated on a sub-cycle timescale of THz wave, indicating the formation of THz-induced dressed states of excitons.
We report on the nonlinear magnetization dynamics of a HoFeO3 crystal induced by a strong terahertz magnetic field resonantly enhanced with a split ring resonator. The terahertz magnetic field induces a large magnetization change of 40% of the spontaneous magnetization. The frequency of the antiferromagnetic resonance decreases in proportion to the square of the magnetization change.
Intense terahetz pulses induce a photoluminescence flashes from undoped GaAs/AlGaAs quantum wells under continuous wave laser excitation. This result indicates that the number of excitons increases 10000-fold from that of the steady state.
We report on the field ionization process of accepters in p-Ge under intense terahertz (THz) electric field. Broadening of the accepter absorption lines followed by disappearance is observed below 10 kV/cm. In the strong field limit, one can see clearly Drude dispersion. This implies that the THz field ionization takes place quite faster than 1 ps.
We investigated the spatiotemporal terahertz (THz) near-field distribution of a split ring resonators (SRR) matrix using a real-time THz microscope. The near-field THz imaging analysis on a large area revealed the photonic crystal properties of the SRR matrix. This technique may open a door for the development of high sensitivity biosensors.
We report on the extraordinary carrier multiplication phenomena of GaAs quantum wells under only intense terahertz (THz) pulse irradiation. The intensity of exciton luminescence is enhanced more than about 103 times with an increase of the electric field amplitude of the THz pulse from 0.5 to 1 MV/cm with a threshold-like behavior.
The nonlinear interactions of GaAs quantum wells with intense single cycle terahertz (THz) pulses with amplitudes exceeding 1 MV/cm have been studied. We demonstrated for the first time that the number of carriers is enhanced 103 times more with an increase of the electric field amplitude of the THz pulse from 0.5 to 1 MV/cm, eventually which leading a bright near-infrared luminescence. This highly...
We investigated the THz field enhancement in dipole antennas. Numerical simulation showed an enhancement factor of 70 in a 150 μm-long antenna at 1 THz. The simplicity of the structure may fit to the intense THz field-material interaction research, attracting a lot of recent interests.
The excitonic interaction in ZnSe/ZnMgSSe multiple quantum wells with intense terahertz pulses (~70 kV/cm) has been studied. Our results show a dynamical Stark effect on the excitonic absorption with a subpicosecond response time.
We have developed time-domain attenuated-total-reflection spectroscopy using terahertz pulses (THz-TD-ATR). Accuracy in the time-domain measurements enables us to determine not only a change of reflection but phase shift originating from surface plasmon in InAs
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