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A strong tensile strain (1% biaxial) is applied to germanium microdisks using silicon nitride stressors. Both Fabry-Perot and whispering gallery modes are observed with quality factors up to 1350 limited by free carrier absorption.
We have investigated the room temperature optical properties of 50 µm length, 11 µm large and 500 nm thick tensile-strained germanium photonic wires. Tensile strain is transferred in the germanium layer using a Si3N4 film stressor. An optical recombination of tensile-strained germanium involving light hole band is observed around 1690 nm at room temperature corresponding to a strain magnitude around...
We show that the recombination energy of the direct band gap photoluminescence of germanium can be controlled by an external mechanical stress. The deformation is provided by an apparatus used for blister test. This strain leads to a significant change of the room temperature direct band gap recombination of germanium. An energy red-shift up to 60 meV is demonstrated for the room temperature photoluminescence...
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