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Resistive-switching memory (RRAM) is receiving a growing deal of research interest as a possible solution for high-density, 3D nonvolatile memory technology. One of the main obstacle toward size reduction of the memory cell and its scaling is the typically large current I reset needed for the reset operation. In fact, a large I reset negatively impacts the scaling possibilities of...
NiO-based resistive-switching memory (RRAM) is attracting a growing research interest for high-density non-volatile storage applications. One of the most difficult challenges for RRAM-based high-density memories is the high current necessary for the reset operation (Ireset), which limits the possibilities of scaling for the select diode in the cross-bar memory array. This work addresses the scalability...
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