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In this letter, we compare the switching performances of Cu-based CBRAM cells having either Al2O3 or SiO2 dielectric layer. Both electrical and physical characterizations revealed different Cu mobility in the two dielectrics, impacting forming/switching speed and variability as well as functionality at low current. The modeling of the conduction also indicated different filament shapes in the two...
In this paper we demonstrate for the first time the origin of the deep reset and low switching variability obtained on pulse-programmed (100ns) 90nm-size W\Al2O3\TiW\CuCBRAM device operated at 10 μA. To this aim we develop a Quantum-Point-Contact (QPC) model describing the conduction of the CBRAM states down to deep current levels, allowing to estimate the effective size of the defect particles in...
In this paper we demonstrate excellent memory performances of a 90nm CMOS-friendly W\Al2O3\TiW\Cu CBRAM cell integrated in a 1T1R configuration and withstanding the back-end of line thermal budget of 400°C. The cell exhibits low-power and highly controlled set and reset operations, allowing reversible multilevel programming controlled by both the set current and the reset voltage. Low-voltage (<3V)...
In this paper we show the strong influence of the composition of the Cu-Te alloy on the conductive-bridging RAM operation of Cu-Te/Al2O3/Si cells. The Cu filament generated during forming and set operations requires lower reset current for lower x in the CuxTe1-x layer. Optimum memory operation is determined for the range 0.5<;x<;0.7, which allows self-limited filament programming using 5μA...
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