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As a widespread form of Deep Reactive Ion Etching (DRIE), the Bosch process alternates etching and passivation cycles, typically leading to characteristic scalloping patterns on the sidewalls. Measurements of the etch depth per cycle ld and undercut length per cycle lu show a strong dependence of the undercut ratio lu/ld on the trench aspect ratio for a wide range of opening sizes. Although various...
A new genetic algorithm (GA) based Kinetic Monte Carlo (KMC) method is developed for atomistic simulations of the evolution of complex multivalued surfaces appearing during anisotropic etching of crystalline silicon. In previous KMC studies the atom-specific rates are calibrated by matching the surface morphologies but the orientation-dependence of the etch rate is described correctly in few etching...
We use the surfactant-modified wet anisotropic etching, a promising micromachining technique we have recently focused on, to fabricate sharp silicon tips with high aspect ratio without additional sharpening by thermal oxidation. Because of the intriguing variation of etching characteristics in surfactant-added solutions as compared to traditional etchants, tips possessing a front angle of about 18°...
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