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The reliability of high performance Field-PMOS FET with thick gate oxide was improved. By reducing the amount of charge in the insulating film, RESURF effect was well performed in the drift region to obtain BVDSS over 350 V. Gate oxide breakdown voltage was found to decreas at AC high slew rate, and its reduction was suppressed with the fluorine termination. NBTI shift was also reduced within 15 %...
We have developed 300 V Field-MOS FETs for High-Voltage switching IC. The breakdown voltages are 410 V/370 V with specific on-resistance of 1845/11000 mΩ·mm2 for Field-NMOS/PMOS FETs, respectively. The vertical and lateral electric fields are both optimized to maximize a breakdown voltage at wide range of substrate voltages and minimize a specific on-resistance with a device layout optimization by...
A manufacturable 10V-BVcc/15GHz-fr complementary SiGe BiCMOS foundry process was developed for high-performance multi-media applications. A novel SiGe profile with a forward/backward stepped Ge profile and controllable emitter interface layer improved the SiGe PNP's FOM to 620 GHz ldrV.
Two important technologies are exploited in the high-speed SiGe BiCMOS fabrications based on the inspection of the device physics. The effective reduction of the base resistance is achieved by optimizing profile and configuration of the SiGe HBT. Moreover, the concept of obtaining a narrow base in the BiCMOS process is established, which enables the ultra-high-speed SiGe BiCMOS
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