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This paper aims to study the effect of process parameter variation on a nano-scaled planar p-type MOSFET (metal-oxide-semiconductor field-effect transistor) device for 22 nm technology using Taguchi's L9 orthogonal array. The device was constructed with high-k/metal gate consisting of Titanium dioxide (TiO2) and Tungsten silicide (WSix) metal gate using an industrial-based numerical simulator. Using...
This paper provides the enhancement of 22nm planar PMOS transistor technology through downscaling, design parameter simulation and optimization process. The scaled down device is optimized for its process parameter variability using Taguchi method. The aim is to find the best combination of fabrication parameters in order to achieve the target value of the threshold voltage (Vth). A combination of...
The evolution of MOSFET technology has been governed solely by device scaling, delivered an ever-increasing transistor density through Moore's Law. In this paper, the design, fabrication and characterization of 32nm HfO2/TiSi2 PMOS device is presented; replacing the conventional SiO2 dielectric and Poly-Silicon. The fabrication and simulation of PMOS transistor is performed via Virtual Wafer Fabrication...
This paper reports on the effects of the Halo structure variations on threshold voltage (V th ) in a 22nm gate length high-k/metal gate planar NMOS transistor. Since the V th is one of the important physical parameter for determining the functionality of complementary metal-oxide–semiconductor device, this experiment will focus on finding the best combination on process parameter to...
In this article, we examine the effect of four process parameters and two noise parameters on the threshold voltage (Vth) of a 22nm gate length PMOS device. The gate of the device uses titanium dioxide (TiO2) as the high permittivity material (high-k) layer to replace the traditional silicon dioxide (SiO2) dielectric layer. While the polysilicon (poly-Si) which is also known as self-aligned silicide...
As CMOS technology scales down to the nanometer level process variation can produce deviation in device parameters which affect circuit performance. In this paper, we investigate the effect of seven process parameters and two process noise parameters on threshold voltage (Vth) in a 32nm PMOS transistor. Using Taguchi's experimental robust design strategy seven process parameters were assigned to 7...
Taguchi method was used to optimize of the effect process parameter variations on threshold voltage in 45nm NMOS device. In this paper, there are four process parameters (factors) were used, which are Halo Implantation, Source/Drain (S/D) Implantation, Oxide Growth Temperature and Silicide Anneal temperature. The virtual fabrication of the devices was performed by using ATHENA module. While the electrical...
In this paper, we investigate the impact of process parameter like halo structure on threshold voltage (VTH) and leakage current (ILeak) in 45nm NMOS device. The settings of process parameters were determined by using Taguchi experimental design method. Besides halo implant, the other process parameters which used were Source/Drain (S/D) implant and oxide growth temperature. This work was done using...
Taguchi method was used to analyze the experimental data in order to get the optimum average of silicide thickness in 45nm devices. The virtually fabrication of the devices was performed by using ATHENA module. While the electrical characterization of the devices was implemented by using ATLAS module. These two modules were used as design tools and helps to reduce design time and cost. In this paper,...
The characteristics of high performance 45 nm pMOS devices based on International Technology Roadmap for Semiconductor (ITRS) have been studied using ATHENA and ATLAS's simulator. There are four factors were varied for 3 levels to perform 9 experiments. The factors are halo implantation, Source/Drain (S/D) implantation, oxide growth temperature and silicide anneal temperature. In this paper, Taguchi...
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