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This paper presents a new control algorithm in robotic hand based on tactile and slippage sensations. Optical three-axis tactile sensor is used as tactile sensing device at the robot hand system to acquire tactile and slippage information. The tactile sensor is based on optical waveguide transduction method that capable of defining normal and shear forces simultaneously. The proposed algorithm consists...
This paper present object handling capabilities of two robotic hands equipped with optical three-axis tactile sensor. We present optimization of grasp control in tactile sensor and robot hand control system to precisely control robot hand based on tactile sensing information. To enhance performance of the robot hand, stiffness distinction parameters were applied in the control system. These parameters...
This paper analyzes grasp synthesis in multi-fingered robot arm equipped with a tactile sensor to handle objects located at arbitrary positions. We developed an 11-dof multi-fingered arm and a novel optical three-axis tactile sensor system based on an optical waveguide transduction method. The tactile sensor can simultaneously acquire normal and shearing forces. We analyzed normal and shear force...
This paper presents a new algorithm for object handling tasks based on active tactile and slippage sensations using a humanoid robot multifingered arm for an object that exists at an arbitrary position. The idea is to enhance real-time object handling tasks based on tactile sensing in humanoid robotics, where grasp, move and release motions are involved. We developed a novel hemisphere-shaped optical...
We have developed highly reliable low resistance copper contact technology for CMOS device beyond 32nm node. Cu contact is expected to reduce contact resistance but degradation of device performance caused by Cu diffusion into Si and filling failure of high aspect ratio contact hole using current BEOL Cu process are concerned. The excellent Cu diffusion barrier endurance of CVD TiN/PECVD Ti stacked...
This paper proposes highly reliable, low resistance and cost effective Cu interconnect system for 45nm CMOS device and beyond. Overhang formation and Cu line resistance increase by deposition process variation are serious problems for titanium (Ti) barrier metal (BM). Overhang reduction by surface nitridation of Ti BM has been successfully demonstrated. It has been clarified that Cu resistivity increase...
In this study, investigation of the insulation performances of the silicone oil as an insulating medium is studied with aim of realization of environmental friendly electric power apparatus, which is considered to be flame retardant. This investigation is searching for the streaming electrification characteristics when silicone oil flows in consideration of cooling of electric power apparatus. As...
This paper, investigation of the breakdown characteristics of various combined insulation in the silicone oil as an insulating medium is studied with aim of realization of electric power apparatus, which is considered to be flame-retarding. As the first step, the surface breakdown characteristics of the configuration with triple-junction where the solid insulator is in contact with the electrode are...
This paper elucidated for the first time that titanium (Ti) is an excellent barrier metal (BM) material from the stand point of cost and performance, especially for the porous low-k ILD materials. Both stress induced voiding (SIV) suppression and one order longer electromigration (EM) lifetime were obtained by introducing Ti instead of the conventional tantalum (Ta). It has been considered that the...
Moisture induced via failure (MIVF) is studied for 45nm interconnect technology using porous low-k films. Test patterns are designed to examine the layout dependence of the MIVF. Some fundamental and important layout dependencies of the via resistance increase are investigated and considered for the first time. It has been found that the MIVF has not been suppressed, even though multiple vias structure...
The authors point out that Al thin films fill in the grooves on SiO/sub 2/ when no surface native oxide of Al exists. Analytical calculations have shown that the complete Al filling occurs because of the reduction of the total free energy for the Al/SiO/sub 2/ system. The filled Al lines in the grooves are single crystalline. The filled single crystal Al interconnections have excellent endurance against...
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