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Low temperature stacking of dies for 3D integration has been gaining interest due to the thermal sensitivity of some advanced node devices such as DRAM. Sn-based solder joint is considered as a promising approach for making die to die interconnections due to its low bonding temperature and high yield. Previously the Cu/Sn solid state diffusion bonding at 150 °C was reported, during which the bonding...
This paper presents a zero-level packaging technology for hermetic encapsulation of MEMS. The technology relies on the “chip capping” of the MEMS using a metallic bond made by means of diffusion soldering of a Cu-Sn system at a temperature of around 250°C. For this, on a “capping wafer” a sealing ring (or bond frame), composed of a double layer of Cu/Sn, is grown, and on the MEMS wafer a matching...
3D die stacking is a key technology for enabling 3D integration wherein two or more dies are stacked on top of each other with vertical interconnections. This result in high speed interconnects with reduced noise and crosstalk as compared to wire bonded assemblies. 3D integration may require sequential stacking of multiple dies without disturbing the previously bonded die. This can be achieved by...
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