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This paper presents a 2.5 GHz fully integrated Power Amplifier (PA) in 65-nm bulk CMOS TSMC process, for use in 4G LTE unmanned aerial vehicle (UAV). The proposed reconfigurable PA architecture of four sub PA cells, combined with Power Cell Switching (PCS) technique allows the high backoff output power level required by the LTE standard. The circuit presents saturated output power of +29.5 dBm, a...
This paper presents a 28 GHz CMOS balanced Power Amplifier (PA) with integrated quadrature hybrid couplers to achieve robust load insensitivity for 5G phased array applications. The proposed balanced PA achieves a saturated output power (Psat) of 18.7dBm and a maximum Power Added Efficiency (PAEmax) of 12.4% with 17.5dB gain. It consumes 154mW and occupies 0.66mm2 of die area. Each power cell is based...
A silicon integrated wideband common emitter amplifier driver unit in 55 nm SiGe BiCMOS technology designed for a 60 Gb/s silicon photonic segmented Mach-Zehnder Modulator (SE-MZM) is reported in this paper. It achieves a bandwidth of 42.2 GHz (0.3–42.5 GHz), allowing the transmission of an On-Off Keying (OOK) modulated optical signal on a single optical channel with a data rate of up to 60 Gb/s....
This paper describes a compact two-stage pseudodifferential cascode power amplifier implemented in 7-metal-layer 65nm Low-Power CMOS process. A cascode topology is associated with wideband matching networks which combine integrated transformers and slow-wave transmission lines. The power amplifier achieves 26GHz of bandwidth from 48GHz to 74GHz, with a 1dB ripple flat gain between 50GHz and 70GHz...
A two-stage single-ended Power Amplifier (PA) is fabricated for the 60GHz Wireless Personal Area Network (WPAN) standard. It is based on the 65nm CMOS technology from STMicroelectronics. The PA is biased in class A and uses distributed elements to perform impedances matching. S-parameters and large signal simulations are validated by measurement results. Load pull measurements are performed to get...
A fully integrated Power Amplifier (PA) is fabricated for the 60GHz Wireless Personal Area Network (WPAN). It is based on the 65nm CMOS technology from STMicro-electronics. The PA is matched without serial transmission lines (T-Lines) to reach good performances and low die area. S-parameters and load pull measurement results are demonstrated and compared with electromagnetic simulations for the power...
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