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A novel sharp switching Z2-FET DGP device (Zero Impact Ionization and Zero Subthreshold Slope FET with Dual Ground Planes) relying on band modulation mechanism is presented in this paper. The device is fabricated in the most advanced FDSOI (Fully Depleted SOI) technology with Ultra-Thin Body and Buried Oxide (UTBB). The Z2-FET DGP is an upgraded version of Z2-FET. It features sharp on-switch, adjustable...
We propose and demonstrate experimentally a band-modulation device with extremely sharp switching capability. The Z3-FET (Zero gate, Zero swing and Zero impact ionization) has no top gate, is processed with FDSOI CMOS technology, and makes use of two adjacent buried ground planes acting as back gates. The buried gates emulate respectively N+ and P+ regions in the undoped body, forming a virtual thyristor-like...
A systematic study of a novel band modulation device (Z3-FET: Zero gate, Zero swing slope and Zero impact ionization) fabricated in most advanced Fully Depleted Silicon-On-Insulator technology is presented. Since the device has no front gate, the operation mechanism is controlled by two buried ground planes. Characteristics such as sharp switching, low leakage, and controllable triggering are measured...
Z2-FET (Zero Impact Ionization and Zero Subthreshold Slope FET) is a very recent sharp switching device which achieves remarkable performance in terms of leakage current and triggering control. The device is fabricated with Ultra-Thin Body and Buried Oxide (UTBB) Silicon-On-Insulator (SOI) technology, features an extremely sharp on-switch, an adjustable triggering voltage (VON), and can be considered...
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