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In this paper, we present the noise measurement results of InAs/AlSb HEMTs at room temperature under very low drain bias (100mV) at 30GHz. Under these dc bias conditions the transistor exhibit NFmin=1.56 dB and Gass=5.3dB @30 GHz for Pdc= 7.3μW/μm. These results are compared to our previous work and the great improvements observed open up the possibility to develop a 100mV electronics at room temperature.
This paper discusses 120nm AlSb/InAs HEMTs operating at ultra low drain. HEMT is fabricated with ohmic contact evaporation and Schottky T-gates realization. A deep mesa isolation is used to remove completely the buffer leading to air-bridge gate.
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