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Unusual peaks in the transconductance gm(VGS) characteristics of n-channel UTBOX devices have been evidenced at 10 K and 77 K operation for an applied front gate voltage around 1.1 V while the back gate is grounded. The origin of this behavior was also addressed using additional low frequency noise (LFN) measurements. It is believed that the unusual peak may be related to a tunneling effect through...
The noise spectra of the studied n-channel UTBOX devices contain flicker noise and Lorentzian components. At room temperature it was found that the flicker noise is explained by the carrier number fluctuation model for both front and back interfaces. Due to the thin silicon film thickness a strong electrostatic coupling between front and back interface was evidenced. The evolution of the low frequency...
Broad similarity between negative bias temperature instability (NBTI) relaxation and 1/f noise is observed. Individual transitions in NBTI relaxation in small pFETs are observed and Poisson defect number statistics is inferred. Finally, it is argued that the wide distribution of defect times should be considered in addition to defect number variation in small devices.
In this paper, we investigate the quality of MOSFET gate stacks where high-k materials are implemented as gate dielectrics. We evaluate both drain- and gate-current noises in order to obtain information about the defect content of the gate stack. We analyze how the overall quality of the gate stack depends on the kind of high-k material, on the interfacial layer thickness, on the kind of gate electrode...
This paper discusses the impact of interfacial layer engineering on the low-frequency noise behaviour of polysilicon emitter bipolar transistors. The main purpose of the interface engineering is to tailor the DC parameters (current gain ??). However, it will be shown that if the base-emitter junction depth is not varied too much, this engineering also determines the noise of the transistors, for sufficiently...
This paper discusses the low-frequency noise behaviour corresponding to Random Telegraph Signals in submicrometer Si MOSTs. It is shown that when the noise spectral density is measured as a function of the gate voltage (linear operation) or of the drain voltage, peak-shaped features are generally obtained. This excess-noise peak can be used to identify the occurrence of RTS, for instance in Silicon-on-Insulator...
The channel hot-carrier (CHC) degradation of submicron p-and nMOST's is studied using Random Telegraph Signal (RTS) and low frequency (lf) noise. As will be demonstrated, the changes observed in the RTS fractional amplitude ??ID/ID are similar as the changes in the drain current ID, i.e., for pMOST's an increase is observed after CHC stress, while a reduction is observed for nMOST's. These observations...
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