The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Short-channel controllability by insulating halo (IH) is investigated using the NFET strained-Si technology. By embedding SiO2/Si3N4 insulators in the halo regions, the increase of halo implant concentration reduces source/drain depths and improves short-channel effects such as drain-induced barrier lowering. With Ioff similar to the control device at the same gate length by adjusting the threshold...