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Practical silicon stacking requires pre-tested dies, but contact probing of TSV interconnects requires much higher density, lower probing forces, and lower cost per pin than conventional probe cards have achieved. This paper examines a cost-effective, lithographic-based MEMS probe card technology that is suitable for probing 40µm pitch arrays, and scalable to finer pitches. Initial mechanical and...
In this paper, we discuss a system for performing process optimization, and its application to the optimization of a 0.5??m CMOS process. The approach includes an initial Target-Oriented experimental design strategy, elimination of ineffective parameters, a second set of experiments to determine a set of approximating models for each response, detection of appropriate transformations of input factors...
The accurate simulation of implanted and diffused impurity profiles in silicon is extremely important when developing VLSI processes. In this work simulations with different process simulators and the corresponding experimental results for implantation and diffusion in N2 ambient of boron in silicon are compared. Our study reports a remarkable dose dependence of the shape of the experimental profiles...
In this work the formation of silicon on insulator (SOI) substrates by oxygen implantation (SIMOX) and annealing followed by an epitaxial deposition step will be described. Physical results for the material will be presented and then the corresponding electrical parameters will be discussed and compared with those obtained from bulk wafers processed simultaneously. From the results described we hope...
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