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The response to a 60-MeV proton irradiation of nMOSFETs fabricated in a 65-nm CMOS technology using a 1.4-nm gate oxide is reported. A strong dependence on the gate bias during the exposure is found. Whereas no degradation is observed for 0-V bias, soft or hard breakdown occurs under normal operational conditions, i.e., 1.2 V on the gate. Furthermore, it is noted that the breakdown happens preferentially...
This paper reports on the radiation response of 90 nm CMOS transistors to a high fluence (3times1012 p/cm2 ) of ~60 MeV protons. A pronounced dependence on the gate bias Vgs during the exposure has been noted for the n-channel devices: while no degradation of the input and output characteristics is found for VGS=0 V and a modest degradation for floating gate conditions, a catastrophic failure can...
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