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Bumpless interconnect of 6-mum-pitch Cu electrodes was realized at room temperature with the surface activated bonding (SAB) method. In this study, we propose a novel bumpless structure, where the electrodes and a surrounding Cu frame are fabricated with the same height to increase bond strength and demonstrate the feasibility of a sealing interconnection between Cu surfaces. The Cu damascene process,...
Bumpless interconnect of 6-mum-pitch Cu electrodes was realized at room temperature with the surface activated bonding (SAB) method. In this study, we propose a novel bumpless structure, where the electrodes and a surrounding Cu frame are fabricated with the same height to increase bond strength and demonstrate the feasibility of a sealing interconnection between Cu surfaces. The damascene process,...
In this study, we demonstrated the bumpless interconnect of Cu electrodes in millions-pins level in the wafer-scale by means of the surface activated bonding (SAB) method. The bumpless interconnect is a highly effective way to compensate the thermal expansion mismatch to obtain the bonding pitch of microns where ultra-low profiled Cu electrodes are bonded directly at low heating temperature to achieve...
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