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The NBTI characteristics of SiC MOSFET were studied by the subthreshold swing. The subthreshold swing was found to be very sensitive to the starting bias of transfer curve. The increase of subthreshold swing for MOSFET with poor oxide reached 400% when the starting bias was −15 V. The increase of subthreshold swing was caused by enhanced hole trapping which could be explained by the mechanism of positively...
A junction barrier controlled Schottky rectifier integrated silicon carbide MOSFET (SiC JMOS) is proposed in this paper, which merged a double implanted MOSFET (DMOS) and junction barrier controlled Schottky diode (JBS) in a monolithic SiC device without any additional process and area penalty. JMOS device in this work exhibits a lower reverse conduction voltage drop than conventional SiC DMOS. There...
In this paper, a SiC MOSFET embedded with a low cut-in voltage Schottky diode was proposed. The 1V cut-in voltage of embedded Schottky diode, which is lower than the 3V cut-in voltage of parasitic body diode, can prevent the potential failures caused by the transformation of dislocation defects into stacking faults due to the recombination of injected minority carriers when parasitic body diode in...
This paper proposes an enhanced coulomb counting method based on the depth-of-discharge (DOD) to estimate the state-of-charge (SOC) and state-of-health (SOH) for valve regulated lead-acid (VRLA) batteries. The losses at different discharging currents are accounted for compensation to the releasable capacities. Furthermore, the SOH is revaluated at the depletion and fully charged states by the maximum...
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