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Low frequency noise diagnostics is a powerful tool to study the quality of gate stacks and the different interfaces and also gives detailed information on the device performance and reliability. The influence of new materials, different processing treatments and alternative device concepts on the low frequency noise performance will be reviewed for a variety of advanced device technologies including...
Three techniques to implement mechanical stress in n-channel Multiple Gate MOSFETs (MuGFETs) are investigated through 3D simulations and transconductance measurements. They are: uniaxial stress, biaxial stress and biaxial+uniaxial stress. Four different fin dimensions are evaluated: a narrow and a wide transistor, combined with a short or a long device. It is shown that the stress distribution and...
The gm ramp and the enhanced gmmax were observed experimentally in high-k triple gate FinFETs with large dimensions. The mobility degradation at the high-k interface and the early GIFBE are the main reasons for this unusual gm behavior. Parameter extraction which normally uses large devices has to be done carefully. For narrow devices gm returns to its usual shape.
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