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This paper describes the optimization of Silicon Germanium (SiGe) NPN bipolar transistors for power amplifier performance. Minimizing the collector resistance and barrier effects in a power device are important to optimize the RF characteristics. Overall, we demonstrate that by optimizing the Ge retrograde design, one can improve the large signal performance to provide 66.5% Power-Added-Efficiency...
An innovative architecture for a dual-band front-end module (FEM) for WiFi and MIMO radios is presented. The FEM consists of a dual-band power amplifier and a SP3T switch-plexer. The SP3T switch-plexer has a SP3T switch and an integrated Rx diplexer. Tx switch paths show 0.1 dB compression at > 33.5 dBm with <1 dB insertion loss (IL) along with > 18 dB isolation. Rx switch/diplexer path has...
Large-signal compact modeling of SiGe HBTs integrated into a new IBM BICMOS technology geared towards high-efficiency power amplifiers is described. The technology exhibits a record 73% PAE at 5.75 GHz in class AB operation. A scalable HiCUM model (high current model) is developed to accurately model the DC, small-signal and large-signal characteristics. Results of DC, fT characteristics, output power,...
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