The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The FinFET device shows well Gate control ability on the channel charge beyond the 14nm and sub-14nm node due to superior electrostatic control ability. The Sub Fin Bottom punch through is a major concern for the 14nm and sub-14nm FinFET device. The high dose punch through stop IMP is popularly used to control the Fin Bottom punch through, but it suffered Fin damage and device performance degradation...
In the process of the FinFETs, shallow trench isolation (STI) oxide recess is very critical to fin height control which has significant impact on the electrical performance of device. In this work, void free STI gap filling process has been demonstrated with process optimization. STI CMP uniformity for both global and local areas has been studied. STI oxide shape and recess uniformity have also been...
In this paper, several steps which would affect CD variation or Fin CD loss were analyzed during FinFET manufacturing, and then we figured out the dominant ones causing CD loss. Finally, an optimization guideline for Fin CD control in process integration was suggested for better Fin CD controllability. It's not only good for Fin CD control, but also good for wide process margin to integrate smaller...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.