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Today's electronic photonic integration approaches involve various trade-offs between integration complexity, cost and performance, with no single approach being able to satisfy both the high-performance and low cost/complexity requirements. Luxtera's process [1] represents monolithic integration, which has low parasitics and customized photonics but slow transistors. Oracle's [2] and ST Micro [3]...
A silicon-photonic link is monolithically-integrated in a bulk CMOS process for the first time. Deep-trench isolation enables polySi waveguide integration. PolySi resonant detectors remove the need for Ge integration. Split-diode design enables half-rate receivers, mitigating transistor speed limitations. An on-chip feedback loop locks the resonant defect detector to the laser wavelength, combating...
An optical transmitter and receiver with monolithically-integrated photonic devices and circuits are demonstrated together for the first time in a commercial 45nm SOI process, without any process changes. The transmitter features an interleaved-junction carrier-depletion ring modulator and operates at 3.5Gb/s with an 8dB extinction ratio and combined circuit and device energy cost of 70fJ/bit. The...
We demonstrate normal and anomalous dispersion engineering as well as self phase modulation induced pulse spectral broadening in silicon nitride waveguides. Nonlinear losses are shown to be absent up to peak intensities of 12GW/cm2.
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