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A high-K/metal gate (HKMG)-stack (TiN/Al-doped-HfOx/SiO2/Si)-based bipolar resistive random access memory (RRAM) cell is proposed and fabricated by 28/20-nm HKMG CMOS compatible technology. Robust reliability behaviors (retention at $200~ {^{\circ }}\text {C} > 4 \times 10^{4}$ s and endurance $> 10^{{{5^{\vphantom {\frac {}{,}}}}}}$ cycles) and ultralow switching current ($<0.1\mu \text{A}$ ...
In the 55nm technology node and beyond of integrated circuits, tungsten is used in contact layer interconnection. Before tungsten deposition, a contact glue layer consist of titanium and titanium nitride (Ti/TiN) is used to enhance adhesion, reduce resistance and prevent tungsten diffusion into the substrate. The growth condition of contact glue layer(s) determines the characteristic of gap fill tungstenfilm,...
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