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In this paper, the major physical effects caused by gate oxide traps in MOSFETs have been integrated for the first time by a proposed unified approach in realistic manners based on industry-standard EDA tools, aiming at practical trap-aware device/circuit co-design. The recently-found AC or transient effects of traps and the interplays with manufacturing process variations are included, with demonstrations...
Since devices actually operate under AC signals in digital circuits, it is more informative to study random telegraph noise (RTN) at dynamic AC biases than at constant DC voltages. We found that the AC RTN statistics largely deviates from traditional DC RTN, in terms of different distribution functions and the strong dependence on AC signal frequency, which directly impacts on the accurate prediction...
As CMOS scaling continuous successfully, technologies for integrating both memory and logic together is highly desirable for high performance and low-power system-on-chip (SOC) with full CMOS compatibility, such as Logic based NVM, floating-body DRAM, MiM based eDRAM, PC-RAM, RRAM, MRAM, FeRAM, ...etc.. New materials (e.g. GST, metal-oxide, high-k, magnetic junction, ...etc.) have greater compatibility...
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