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We demonstrate mesa-type and waveguide-type Ge/Si avalanche photodiodes both with high performances. The gain-bandwidth product was measured as high as 340 GHz and the receiver sensitivity was -28 dBm and -30.4 dBm for mesa-and waveguide-type devices, respectively.
We have studied three types of these detectors; normal incident illuminated p–i–n detectors (NI-PD), waveguide p–i–n detectors (WG-PD), and avalanche photodetectors (APDs) operating over a wavelength range of 850–1550nm. NI-PDs have achieved −14.5dBm sensitivity at 10Gb/s and 850nm, which is comparable to similarly commercially packaged GaAs devices. Unlike GaAs detectors, however, the Ge detectors...
We report on the recent progress in Ge/Si receivers which are becoming competitive in performance with their III-V counterparts. In particular, we will focus on pin and avalanche photodetector-based receiver results at 1310 nm.
We have developed monolithically grown Ge/Si avalanche photodiodes (APDs) for high data rate and near infrared wavelength fiber communication systems. The surface illuminated APDs demonstrate gain-bandwidth of 153 GHz.
This paper is a summary of the performance results of three types of Ge on Si photodetectors, normal incident illuminated p-i-n detectors (NI-PD), waveguide p-i-n detectors (WG-PD) and avalanche photodetectors (APDs) operating over a wavelength range of 850-1550 nm.
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