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Research on a new compact BJT PTAT temperature sensor structure has been reported. The zener junction-connected BJT transistor and Base-Emitter voltage of transistor can be temperature dependent. The performance of new compact PTAT circuit can be improved by using difference in thermal characteristics between p-n and zener junction. DeltaV/DeltaT can be further increased by connecting p-n and zener...
This paper presents the effect of temperature to strain gauge resistance, sensitivity, and hysteresis of surface micromachining pressure sensor with polysilicon membrane and polysilicon resistor as piezoresistive strain gauge. The resistance value is nominally 2.7 k Omega, under normal atmospheric pressure and room temperature. The experiments measured the relationship between resistance of strain...
This paper describes the impact of thickness of cobalt silicide to the sentivity of p-n junction temperature sensor. The starting cobalt thickness of 12, 20 and 30 nm and non-silicided reference wafer have been used. The maximum sentivity for starting cobalt thickness of 12 nm has been obtained from both large area and long perimeter p-n junction. This corresponds to the low leakage current and series...
This paper presents the characteristics of silicon thin film thermistors. The polycrystalline silicon and amorphous silicon films were deposited by low pressure chemical vapor deposition (LPCVD) to serve as thermistors. We have studied the effects of temperature on thermistor with various boron implantation doses from 1.0times1016 to 2.0times1016 cm-2. The thermistors were characterized by temperature...
This paper presents a method for selective growth of CNT films. Specific areas for CNT growing were defined by patterning Ni electrodes on a Cu substrate using lithography process. CNT films were grown on the substrate by HFCVD method at atmospheric pressure using ethanol and hydrogen as sources. The films were examined and confirmed with SEM, Raman and EDX analysis. The authors observed that CNT...
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