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We compared the impact of Fin LER and Lg variations in Si and In0.53Ga0.47As FINFETs, for the first time. Better electrostatics in In0.53Ga0.47As than in Si, due to higher effective channel length from lower SD doping in In0.53Ga0.47As, reduces Lg variation impact. Strong quantum confinement effects in In0.53Ga0.47As FINFET make them more sensitive to Fin LER variation than Si. However, the lower...
A vertical device architecture having ∼40% density improvement over planar for sub-10nm technology node has been evaluated for Si NMOS and III–V HTFET with Lg=16nm. For LOP applications including the effect of parasitic elements, the HTFET presents superior energy efficiency and desired low-power analog performance for VDD<0.6V, while MOSFET is superior for VDD>0.6V. To further improve...
Tunnel field effect transistors (TFET) have gained interest recently owing to their potential in achieving sub-kT/q steep switching slope, thus promising low Vcc operation[1–5]. Steep switching slope has already been demonstrated in Silicon TFET [2]. However, it has been theoretically shown and experimentally proved that Si or SixGe1−x based homo-junction or hetero-junction TFETs would not meet the...
Compound semiconductors such as In0.7Ga0.3As and InSb are being actively researched as replacement for silicon channel materials for logic applications due to their superior transport properties [1,2]. Planar III–V quantum-well FETs have already demonstrated with superior performance than the state-of-the art Si MOSFETs for low supply voltage (Vcc) applications [1–3]. A key research challenge remains...
We propose a Loadless 4T SRAM cell using degenerately doped source (DDS) p-channel In0.53Ga0.47As Tunnel FETs (TFETs) as dual purpose access/load devices and low leakage steep sub-threshold n-channel TFETs as drive devices. A Loadless 4T CMOS SRAM cell has the requirement that the leakage current of the PMOS access transistors should be larger than the leakage current of the NMOS drive transistors...
Continued miniaturization of transistors has resulted in unprecedented increase in device count leading to high compute capability albeit with increase in energy consumption. Here, we present our research on advanced non silicon electronic material systems and novel device architectures - quantum-well FETs, inter-band tunnel FETs and tunnel-coupled nanodot devices - for heterogeneous integration on...
Inter-band tunnel field effect transistors (TFETs) have recently gained a lot of interest because of their ability to eliminate the 60mV/dec sub-threshold slope (STS) limitation in MOSFET. This can result in higher Ion-Ioff ratio over a reduced gate voltage range, thus predicting TFETs superior for low supply voltage (VDD ≤ 0.5V) operation. Unlike Si and Ge, III-V semiconductors like In0.53Ga0.47As...
This paper presents single electron transistor (SET) devices operating at room temperature as an attractive option to implement low energy consumption circuits with low-to-moderate performance requirements. Currently, such circuits are implemented using CMOS technologies operating at low supply voltages. CMOS is usually leakage dominated at such a low voltage regime and various optimizations are necessary...
An increasing integration of nanoscale sensors is being observed in BioSensing and Biomimetic systems. Power consumption is deemed a major limiter as the complexity of integration increases. Supply voltage based scaling using CMOS is also a challenge due to increasing leakage currents. This work presents alternative devices - Interband Tunnel Field Effect Transistors and Split-Gate Quantum Nanodots...
We propose a novel binary decision diagram (BDD) based reconfigurable logic architecture based on split-gate quantum nanodots using III-V compound semiconductor-based quantum wells. While BDD based quantum devices architectures have already been demonstrated to be attractive for achieving ultra-low power operation, our design provides the ability to reconfigure the functionality of the logic architecture...
Background: The current standard tool for diagnosing allergic contact dermatitis (ACD) in the United States is the T.R.U.E. test panels, which consist of 23 allergens. Previous studies have raised concern regarding the adequacy of these panels in fully assessing patients with possible ACD. Objective: We sought to examine the use of the T.R.U.E. test allergens as the primary diagnostic method for detecting...
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