The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We have investigated Al2O3, Dy2O3, and La2O3 as dielectric cap layers for use in low Vt CMOS integration schemes. The cap layers are found to reduce the Vt by 0.2 V for pFET, and with 0.2 V and 0.5 V for nFET, respectively. Subsequently, we report on the benefits of performing the nitridation (by means of DPN) after cap deposition, instead of before. This allows better control of the nitrogen profile...
The key result in this work is the experimental demonstration that adding Yb to Ni FUSI allows for tuning the work function (WF) from midgap (NiSi ~4.72 eV) to n-type band-edge (~4.22 eV) on thin SiON, maintaining same EOT. In addition, we did not observe any interface adhesion issues found in other reports when WF is modulated by dopants such as As or Sb. We also show that reliability is similar...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.