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An analysis is presented of the layer-thickness dependent and temperature-dependent current density in sandwich-type electron-only devices based on the amorphous small-molecule organic semiconductor BAlq, which is frequently used in organic light-emitting diodes. The electron transport can be consistently described by assuming a density of states (DOS) which is a superposition of a Gaussian DOS and...
This paper discusses a new technique developed for generating well defined RF large voltage swing signals for on wafer experiments. This technique can be employed for performing a broad range of different RF reliability experiments on one generic test structure. The frequency dependence of a gate-oxide wear out stress was investigated using this methodology for frequencies of up to 1 GHz.
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