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We proposed a 3D 4×4 optical switch using vertical multimode interference (VMMI) couplers. This device can flexibly expand vertical connectable distance varying the height of the MMI coupler. We fabricated the device with a VMMI height of 10.0 μm as well as a wide band optical switching. And we measured fundamental operation and combine results.
Laser diodes (LDs) and other optical devices using quantum dots (QDs) are promising devices, as have already been reported. Compact and highly functional photonic integrated circuits (PICs) are desired to establish advanced photonic networks. Moreover, characteristics such as high temperature stability are essential if the PICs are integrated with large-scale integration (LSI), because the heat diffused...
We studied an Ar-implantation-induced quantum dot intermixing (QDI) technique and its physical mechanism, and demonstrate an almost equal performance of the QDI used 120 nm shifted laser diode compared to the performance without the technique.
We studied the photonic integrated device of highly-stacked quantum dot (QD) on InP(311)B substrates using quantum dot intermixing (QDI) technique. A photoluminescence (PL) spectral blue-shift by about 190 nm was observed for the QDI process with B+ implantation and rapid thermal annealing (RTA) at 620°C. A QD laser integrated with two micro-ring-resonators (MRRs) was successfully fabricated with...
We proposed a polymer 4×4 three-dimensional (3D) optical interconnection switch. The analysis shows colorless and polarization-independent operation. We fabricated the proposed device, and it successfully operated at 1550nm wavelength in quasi-colorless and polarization independence.
We have proposed the new waveguide-type Kretschmann-structure surface plasmon resonance sensor employing two incident-angled structures which gives slightly different characteristics for high-sensitive and wide-measurable range.
We proposed a novel silicon cross-waveguide reflection-type optical switch. Performance simulation was carried out to show a low crosstalk of about −25dB. We actually fabricated the device to exhibit fundamental switching operation.
We fabricated a double micro-ring-resonator wavelength-selective filter using the waveguide fabricated by the intermixing of InAs/InGaAlAs quantum dots grown on an InP (311)B substrate. Intermixing was done by using ICP-RIE etching and annealing technique at a low temperature of 650°C. The output-power contrasts of the device were 9.0 dB and 8.6 dB for TE and TM modes, respectively.
A high-speed and compact non-blocking 8×8 InAlGaAs/InAlAs Mach-Zehnder-type optical switch (MZ-OS) fabric consisted of twenty eight 2×2 MZ-OS elements were successfully fabricated. It is expected to operate with switching times of less than 2.5ns.
Optical property of carbon nanotube (CNT) embedded in Si slot waveguide was investigated. Due to high optical confinement in the waveguide, a fundamental saturable absorption characteristic was confirmed.
We demonstrated the full-interport connection of a non-blocking 4×4 InAlGaAs/InAlAs Mach-Zehnder-type optical switch (MZ-OS) fabric. This switch fabric is consisted of six 2×2 MZ-OS elements in a cascading configuration, and it successfully operated with high-extinction ratios of about 20dB and polarization independence.
We have studied the intermixing of highly-stacked InAs/InGaAlAs quantum dots grown on InP (311)B substrates by SiO2 sputtering and annealing technique with a low temperature of 650 □ to find a large PL spectral blue-shift by about 60 nm. This result suggests that the low temperature intermixing technique is promising for easy formation of monolithic integrated circuits with the highly-stacked QD structures.
We proposed a 2×2 polymer three-dimensional (3D) optical interconnection switch. The analysis of our device shows colorless and polarization-independent operation. We fabricated the proposed device, and it successfully operated at 1550nm wavelength.
In this paper, we fabricated the QD-SOA which utilized the highly-stacked quantum dots structure with the strain-compensation technique and MQW-SOA, and compared the measured fundamental characteristics to the one of MQW-SOA.
We fabricated a polymer double micro-ring-resonator wavelength-selective filter, whose ring resonators were directly coupled with MMI each other. The device exhibited the output-power contrasts of 8.5 dB and 10.0 dB for TE and TM mode, respectively.
We have fabricated a polymer double micro-ring-resonator wavelength-selective filter which exhibited the output-power contrasts of 7.9dB and 9.4dB for TE and TM modes respectively.
This paper overviews the low power consumption optical switches for the advanced optical networks, and the actual devices using InAlGaAs and polymer materials are demonstrated for high- and low-end applications experimentally together with device designing. Future issues for heterogeneous integration are also addressed.
We propose a 2×2 polymer three-dimensional optical switch and analyze the performance showing colorless and polarization-independent operation with a low-power consumption of about 2.9mW. We also experimentally demonstrate the fundamental transmission characteristics of a passive three-layered optical interconnection circuit.
We propose a polarization-independent silicon wire-waveguide directional coupler optical switch (DC-OS) by adjusting the propagation constant difference between the guided modes. The thermo-optic (TO) switching power consumption is as low as 18.5mW. This polarization-independent DC-OS is expected to be valuable for optical interconnection in silicon photonics.
We analytically investigate the dynamic behaviors of the proposed optical XNOR and AND logic gate devices, with an monolithically integrated highly stacked InAs quantum dots structure SOA fabricated with the strain compensation technique and ring resonators. The calculated results indicate that the optical logic device can operate the logic gate functions at 160Gb/s RZ signals with large eye opening,...
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