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In this paper, we report on the formation of shallow junctions with high activation in both n+/p and p+/n Ge junctions using ion implantation and Flash Lamp Annealing (FLA). The shallowest junction depths formed for the n+/p and p+/n junctions were 9.5 nm and 10.7 nm with sheet resistances of 620 ohms/sq. and 414 ohms/sq., respectively. Additionally, by reducing knocked-on oxygen during ion implantation,...
High-power GalnP/AlGalnP broad-stripe lasers were irradiated with 200- and 10-MeV protons. The normalized threshold current linearly increases with increasing proton fluence. In GalnP lasers smaller increase in the threshold current was observed compared with high-power AlGaAs lasers. Proton energy dependence of the threshold current damage factor and forward bias annealing are discussed.
The effect of strain and intrinsic defects on both electronic and structural characteristics of HfO2-x used for sub-100-nm semiconductor devices was analyzed by a quantum chemical molecular dynamics analysis. The magnitude of the band gap of HfO2 decreases by about 10% under the applied strain of 5%. The stable crystallographic structure of the monoclinic HfO2 changes to a cubic-like structure under...
A 180keV carbon implantation with an ion dose of 8.0 ± 1.0 × 10 17 C + /cm 2 into Si(111) wafer has been investigated in order to examine the synthesis of 3C-SiC at the substrate temperature T s = RT to 800°C and in the subsequent annealing treatment at the temperature T a = 1000–1250°C/2h. The combination at T s ≈ 500°C and at T a > 1200°C...
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