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This paper reports a novel silicon three-dimensional (3D) micro supercapacitor, featured by a high-aspect-ratio structure and nano porous composite electrode material. Electrochemical characterization results of the prototype with NaNO3 electrolyte demonstrate that the 3D supercapacitor exhibits both large capacitance (90.7mF/cm2) and fast power delivery (51.5mW/cm2) per unit area. A very robust stability...
Time of flight (TOF) measurements in positron emission tomography (PET) are very challenging in terms of timing performance, and should ideally achieve less than 100 ps FWHM precision. We present a time-based differential technique to read out silicon photomultipliers (SiPMs) which has less than 20 ps FWHM electronic jitter. The novel readout is a fast front end circuit (NINO) based on a first stage...
The SPIROC chip is a dedicated very front-end ASIC chip for an ILC hadronic calorimeter technical prototype with Silicon Photomultiplier (or MPPC) readout. This ASIC is due to equip a 2,000-channel demonstrator in 2009. The SPIROC chip is the successor of the ILC SiPM ASIC presently used for the ILC AHCAL physics prototype, incorporating additional features like auto-triggering, pipelines, digitization...
We propose several kinds of materials which have different thermal conductivity be the thermal conduction layers between the buffer oxide and substrate of a-Si:H TFT device. The thermal conduction layers, such as Cu, Al, Mo and Si3N4, have significant improvement for thermal accumulation during operation. To understand the transient thermal profile and temperature distribution, we performed by solving...
The carbon was incorporated in biaxial st-Si (stained Si) source/drain NMOSFET for channel strain enhancement. Due to ~52% lattice mismatch between silicon and carbon, the st-Si:C surface channel is under higher strain than that of st-Si, indicating that the carrier mobility can be enhanced significantly by theory. The resistance of st-Si:C with carbon increasing are similar with st-Si, and improved...
In this paper a-Si:H TFTs with the external the mechanical strain and bending cycles is studied. In addition, the trap states distribution is also discussed. Besides, the temperature distribution of a-Si:H TFTs on plastic substrate is an important issue for operation. A thermal conduction layer dissipates the accumulated heat during operation is designed and it calculates the temperature distribution...
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